HOME > Misc > DetailElectron-beam-induced current analysis of dislocations in strained Si/Si0.8Ge0.2Yuan, Xiaoli, SEKIGUCHI, Takashi, 李成奇, 伊藤俊. Proc. of the 4th International Symposium on Advanced Science and Technology of Silicon Materials 144-151. 2004.NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-09-05 11:37:14 +0900 Updated at: 2022-09-05 11:37:14 +0900
