Effects of layer thickness and annealing process on low-frequency noise and detectivity in tunnel magnetoresistive sensors with CoFeSiB soft magnetic layers | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effects of layer thickness and annealing process on low-frequency noise and detectivity in tunnel magnetoresistive sensors with CoFeSiB soft magnetic layers

Murali Krishnan Manikketh, Prabhanjan D. Kulkarni, Tomoya Nakatani, Hirofumi Suto, Yuya Sakuraba.

Journal of Applied Physics 136 [20] 203901. 2024.

https://doi.org/10.1063/5.0231800

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Effects of layer thickness and annealing process on low-frequency noise and detectivity in tunnel magnetoresistive sensors with CoFeSiB soft magnetic layers

作成時刻: 2024-11-29 03:16:12 +0900更新時刻: 2025-01-31 04:29:35 +0900

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