Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Hiroki Waizumi; Muhammad Shamim Al Mamun; Tsuyoshi Takaoka; Md Iftekharul Alam; Yudai Tanaka; Atsushi Ando; Zhipeng Wang; Ryuichi Arafune; Tadahiro Komeda; Hiroki Waizumi; Muhammad Shamim Al Mamun; Tsuyoshi Takaoka; Md Iftekharul Alam; Yudai Tanaka; Atsushi Ando; Zhipeng Wang; Ryuichi Arafune; Tadahiro Komeda

doi:10.1016/j.apsusc.2021.151252

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Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Hiroki Waizumi, Muhammad Shamim Al Mamun, Tsuyoshi Takaoka, Md Iftekharul Alam, Yudai Tanaka, Atsushi Ando, Zhipeng Wang, Ryuichi Arafune, Tadahiro Komeda.

Applied Surface Science 571 151252. 2022.

https://doi.org/10.1016/j.apsusc.2021.151252

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作成時刻: 2022-01-19 03:00:39 +0900 更新時刻: 2026-09-29 08:01:07 +0900