Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita; Kacper Sierakowski; Shoji Ishibashi; Shigefusa F. Chichibu; Michal Bockowski; Jun Suda; Tadakatsu Ohkubo; Nobuyuki Ikarashi; Kazuhiro Hono; Tetsu Kachi; Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita; Kacper Sierakowski; Shoji Ishibashi; Shigefusa F. Chichibu; Michal Bockowski; Jun Suda; Tadakatsu Ohkubo; Nobuyuki Ikarashi; Kazuhiro Hono; Tetsu Kachi

doi:10.1002/pssb.202200183

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi.

physica status solidi (b) 259 [10] 2200183. 2022.

https://doi.org/10.1002/pssb.202200183

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-10-21 03:26:11 +0900Updated at: 2024-04-02 05:25:56 +0900