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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi.
physica status solidi (b) 259 [10] 2200183. 2022.

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    Created at: 2022-10-21 03:26:11 +0900Updated at: 2024-07-06 07:46:20 +0900

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