Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

A. Uedono; T. Naito; T. Otsuka; K. Shiraishi; K. Yamabe; S. Miyazaki; H. Watanabe; N. Umezawa; T. Chikyow; Y. Akasaka; S. Kamiyama; Y. Nara; K. Yamada; A. Uedono; T. Naito; T. Otsuka; K. Shiraishi; K. Yamabe; S. Miyazaki; H. Watanabe; N. Umezawa; T. Chikyow; Y. Akasaka; S. Kamiyama; Y. Nara; K. Yamada

doi:10.1063/1.2345618

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Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, K. Yamada.

Journal of Applied Physics 100 [6] 064501. 2006.

https://doi.org/10.1063/1.2345618

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作成時刻: 2016-05-24 15:07:43 +0900 更新時刻: 2026-10-01 05:44:19 +0900