Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2

Katsuya Ichiki; Kojiro Mimura; Hiroaki Anzai; Takayuki Uozumi; Hitoshi Sato; Yuki Utsumi; Shigenori Ueda; Akihiro Mitsuda; Hirofumi Wada; Yukihiro Taguchi; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi

doi:10.1103/physrevb.96.045106

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Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2
(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)

Katsuya Ichiki, Kojiro Mimura, Hiroaki Anzai, Takayuki Uozumi, Hitoshi Sato, Yuki Utsumi, 上田茂典, Akihiro Mitsuda, Hirofumi Wada, Yukihiro Taguchi, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi.

Physical Review B 96 [4] 045106. 2017.

https://doi.org/10.1103/physrevb.96.045106

NIMS著者

上田茂典

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-09-04 22:04:21 +0900更新時刻: 2024-11-11 05:11:49 +0900

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2
(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)