Hard x-ray photoemission study of the temperature-induced valence transition system 
EuNi2(Si1−xGex)2

Katsuya Ichiki; Kojiro Mimura; Hiroaki Anzai; Takayuki Uozumi; Hitoshi Sato; Yuki Utsumi; Shigenori Ueda; Akihiro Mitsuda; Hirofumi Wada; Yukihiro Taguchi; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi; Katsuya Ichiki; Kojiro Mimura; Hiroaki Anzai; Takayuki Uozumi; Hitoshi Sato; Yuki Utsumi; Shigenori Ueda; Akihiro Mitsuda; Hirofumi Wada; Yukihiro Taguchi; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi

doi:10.1103/physrevb.96.045106

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2
(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)

Katsuya Ichiki, Kojiro Mimura, Hiroaki Anzai, Takayuki Uozumi, Hitoshi Sato, Yuki Utsumi, 上田茂典, Akihiro Mitsuda, Hirofumi Wada, Yukihiro Taguchi, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi.

Physical Review B 96 [4] 045106. 2017.

https://doi.org/10.1103/physrevb.96.045106

NIMS author(s)

UEDA, Shigenori

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-09-04 22:04:21 +0900 Updated at: 2025-04-16 05:12:13 +0900

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex)2
(Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1−xGex)2)