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Density-functional-theory-based calculations of formation energy and concentration of the silicon monovacancy
(Si中単一原子欠陥の形成に関する密度汎関数理論に則った計算)

Sholihun, Mineo Saito, Takahisa Ohno, Takahiro Yamasaki.

Japanese Journal of Applied Physics 54 [4] 041301. 2015.

https://doi.org/10.7567/jjap.54.041301

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作成時刻: 2016-05-24 17:41:30 +0900更新時刻: 2024-03-31 12:09:57 +0900

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