Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-k/SiO2Interface in a Gate Stack Structure
(Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-k/SiO2Interface in a Gate Stack Structure)
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 16:18:14 +0900更新時刻: 2024-04-02 03:41:49 +0900