Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun | SAMURAI, NIMS Researchers Directory Service

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Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun

S. Kim, Y. Oshima, H. Sawada, T. Kaneyama, Y. Kondo, M. Takeguchi, Y. Nakayama, Y. Tanishiro, K. Takayanagi.

Journal of Electron Microscopy 60 [2] 109-116. 2011.

https://doi.org/10.1093/jmicro/dfq084

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 16:42:21 +0900 Updated at: 2026-11-09 05:07:22 +0900

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