Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun

S. Kim, Y. Oshima, H. Sawada, T. Kaneyama, Y. Kondo, M. Takeguchi, Y. Nakayama, Y. Tanishiro, K. Takayanagi.

Journal of Electron Microscopy 60 [2] 109-116. 2011.

https://doi.org/10.1093/jmicro/dfq084

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作成時刻: 2016-05-24 16:42:21 +0900更新時刻: 2024-04-02 03:13:58 +0900

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