HOME > 論文 > 書誌詳細Effects of moisture and redox reactions in VCM and ECM resistive switching memoriesIlia Valov, TSURUOKA, Tohru. JOURNAL OF PHYSICS D-APPLIED PHYSICS [41] 413001-1-413001-18. 2018.https://doi.org/10.1088/1361-6463/aad581 NIMS著者鶴岡 徹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-04 09:35:47 +0900 更新時刻: 2026-01-25 04:42:04 +0900
