HOME > Article > DetailEffects of moisture and redox reactions in VCM and ECM resistive switching memoriesIlia Valov, TSURUOKA, Tohru. JOURNAL OF PHYSICS D-APPLIED PHYSICS [41] 413001-1-413001-18. 2018.NIMS author(s)TSURUOKA, TohruFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-04 09:35:47 +0900Updated at: 2019-05-10 18:54:51 +0900