HOME > Article > DetailEffects of moisture and redox reactions in VCM and ECM resistive switching memoriesIlia Valov, TSURUOKA, Tohru. JOURNAL OF PHYSICS D-APPLIED PHYSICS [41] 413001-1-413001-18. 2018.https://doi.org/10.1088/1361-6463/aad581 NIMS author(s)TSURUOKA, TohruFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-04 09:35:47 +0900 Updated at: 2026-03-27 04:41:53 +0900