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Nanoscale observation of subgap excitations in β-Si3N4 with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials
(Nanoscale observation of subgap excitations in β-Si3N4 with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials)

Takanori Asano, Manabu Tezura, Masumi Saitoh, Hiroki Tanaka, Jun Kikkawa, Koji Kimoto.
Applied Physics Express 15 [7] 076501. 2022.

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    作成時刻: 2022-06-16 03:13:17 +0900更新時刻: 2025-02-10 08:38:46 +0900

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