Nanoscale observation of subgap excitations in β-Si<sub>3</sub>N<sub>4</sub> with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials | SAMURAI, NIMS Researchers Directory Service

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Nanoscale observation of subgap excitations in β-Si₃N₄ with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials
(Nanoscale observation of subgap excitations in β-Si3N4 with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials)

Takanori Asano, Manabu Tezura, Masumi Saitoh, Hiroki Tanaka, Jun Kikkawa, Koji Kimoto.

Applied Physics Express 15 [7] 076501. 2022.

https://doi.org/10.35848/1882-0786/ac6e28

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-06-16 03:13:17 +0900 Updated at: 2026-10-30 08:18:50 +0900

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