HOME > 論文 > 書誌詳細An extraordinarily low-energy threshold of less than 60 keV for ion track formation in siliconH. Amekura, K. Narumi, A. Chiba, Y. Hirano, K. Yamada, S. Yamamoto, Y. Saitoh. Materialia 39 102317. 2025.https://doi.org/10.1016/j.mtla.2024.102317 Open Access Elsevier BV (Publisher) Materials Data Repository (MDR) NIMS著者雨倉 宏Materials Data Repository (MDR)上の本文・データセットMDRavailable An extraordinarily low-energy threshold of less than 60 keV for ion track formation in silicon 作成時刻: 2025-02-23 03:06:39 +0900 更新時刻: 2026-10-13 04:32:54 +0900
