Bias dependent potential distribution of a Pt/HfO<sub>2</sub>/SiO<sub>2</sub>/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Bias dependent potential distribution of a Pt/HfO₂/SiO₂/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy
(Bias dependent potential distribution of a Pt/HfO2/SiO2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy)

Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyo.

Japanese Journal of Applied Physics 53 [5S1] 05FH05. 2014.

https://doi.org/10.7567/jjap.53.05fh05

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作成時刻: 2016-05-24 17:23:54 +0900 更新時刻: 2026-08-28 07:10:50 +0900

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