HOME > 論文 > 書誌詳細Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition methodS. Heo, R. Hayakawa, Y. Wakayama. Journal of Applied Physics 121 [2] 024301. 2017.https://doi.org/10.1063/1.4973491 NIMS著者早川 竜馬若山 裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-02-19 23:41:53 +0900更新時刻: 2024-04-01 21:19:58 +0900
