High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate
(Si(111)基板上エピタキシャルbeta-FeSi2の界面構造と歪みの高分解能電子顕微鏡監察)

Ming Han, Miyoko Tanaka, Masaki Takeguchi, Qi Zhang, Kazuo Furuya.

Journal of Crystal Growth 255 [1-2] 93-101. 2003.

https://doi.org/10.1016/s0022-0248(03)01240-5

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作成時刻: 2016-05-24 11:56:16 +0900 更新時刻: 2026-10-08 07:47:29 +0900

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