HOME > Article > DetailEffects of TiN/TiSi2 buffer layer on the crystallinity and ohmicity of GaN on n-type Si (111)Fumio Kawamura, Naoomi Yamada. Materials Letters 403 139568. 2026.https://doi.org/10.1016/j.matlet.2025.139568 NIMS author(s)KAWAMURA, FumioFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2025-10-01 03:12:12 +0900 Updated at: 2025-11-02 04:41:46 +0900
