Impact of B-doping on topological Hall resistivity in (111)- and (110)-oriented Mn4N single layers with the non-collinear spin structure | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Impact of B-doping on topological Hall resistivity in (111)- and (110)-oriented Mn4N single layers with the non-collinear spin structure

Shinji Isogami, Mitsuru Ohtake, Yukiko K. Takahashi.

Journal of Applied Physics 131 [7] . 2022.

https://doi.org/10.1063/5.0083042

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作成時刻: 2022-04-15 03:24:53 +0900 更新時刻: 2025-04-20 07:06:40 +0900

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