Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono.

ACS Nano 18 [13] 9736-9745. 2024.

https://doi.org/10.1021/acsnano.4c02101

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

作成時刻: 2024-04-09 03:12:04 +0900更新時刻: 2024-04-10 03:11:47 +0900

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