Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga<sub>2</sub>O<sub>3</sub> toward realizing power device applications | SAMURAI, NIMS Researchers Directory Service

Scheduled downtime (October 31st and November 1st, 2026) (2026-10-29)

HOME > Article > Detail

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga₂O₃ toward realizing power device applications

Yuichi Oshima, Elaheh Ahmadi.

Applied Physics Letters 121 [26] 260501. 2022.

https://doi.org/10.1063/5.0126698

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

OSHIMA, Yuichi

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Created at: 2023-01-05 12:13:53 +0900 Updated at: 2026-10-30 08:34:08 +0900

▲ Go to the top of this page