Composition dependence of band offsets for (LaAlO3)(1-x)(Al2O3)(x) gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Composition dependence of band offsets for (LaAlO3)(1-x)(Al2O3)(x) gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy

R. Yasuhara, M. Komatsu, H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, D. Kukuruznyak, T. Chikyow.

Applied Physics Letters 89 [12] 122904. 2006.

https://doi.org/10.1063/1.2356377

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作成時刻: 2016-05-24 15:07:45 +0900更新時刻: 2024-04-01 18:49:44 +0900

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