HOME > Article > Detail高圧下融液徐冷法によるIII族窒化物半導体単結晶育成内海渉, 齋藤寛之, 谷口 尚, 青木勝敏. OYO BUTURI 74 [5] 593-596. 2005.NIMS author(s)TANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 14:52:06 +0900Updated at: 2018-12-15 00:01:39 +0900
