Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Akihiro Kirihara; Masahiko Ishida; Ryota Yuge; Kazuki Ihara; Yuma Iwasaki; Ryohto Sawada; Hiroko Someya; Ryo Iguchi; Ken-ichi Uchida; Eiji Saitoh; Shinichi Yorozu; Akihiro Kirihara; Masahiko Ishida; Ryota Yuge; Kazuki Ihara; Yuma Iwasaki; Ryohto Sawada; Hiroko Someya; Ryo Iguchi; Ken-ichi Uchida; Eiji Saitoh; Shinichi Yorozu

doi:10.1088/1361-6463/aab2cd

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Akihiro Kirihara, Masahiko Ishida, Ryota Yuge, Kazuki Ihara, Yuma Iwasaki, Ryohto Sawada, Hiroko Someya, Ryo Iguchi, Ken-ichi Uchida, Eiji Saitoh, Shinichi Yorozu.

Journal of Physics D: Applied Physics 51 [15] 154002. 2018.

https://doi.org/10.1088/1361-6463/aab2cd

NIMS author(s)

IWASAKI, Yuma

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-04-02 21:06:37 +0900 Updated at: 2026-11-04 04:28:00 +0900