HOME > Article > DetailContact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire(Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire)Pushkar Dasika, Debadarshini Samantaray, Krishna Murali, Nithin Abraham, Kenji Watanbe, Takashi Taniguchi, N Ravishankar, Kausik Majumdar. Advanced Functional Materials 31 [13] 2006278. 2021.https://doi.org/10.1002/adfm.202006278 NIMS author(s)TANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-04-20 03:00:17 +0900 Updated at: 2026-09-29 06:40:58 +0900