Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg&#8211;Barrett X-ray topography

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Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography
(Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography)

Hirofumi Matsuhata, Hirotaka Yamaguchi, Tamotsu Yamashita, Toshiaki Tanaka, Bin Chen, Takashi Sekiguchi.

Philosophical Magazine 94 [15] 1674-1685. 2014.

作成時刻: 2016-05-24 17:34:39 +0900更新時刻: 2024-04-02 03:31:27 +0900