HOME > Article > Detailβ-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxideTakayoshi Oshima, Makoto Hashikawa, Sansei Tomizawa, Kazuho Miki, Toshiyuki Oishi, Kohei Sasaki, Akito Kuramata. Applied Physics Express 11 [11] 112202. 2018.https://doi.org/10.7567/apex.11.112202 NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-11-12 11:25:02 +0900 Updated at: 2026-10-08 04:35:26 +0900
