HOME > 論文 > 書誌詳細Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditionsKen Watanabe, Takeo Ohsawa, Isao Sakaguchi, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, Ryosuke Takahashi, Emily M. Ross, Yutaka Adachi, James S. Speck, Hajime Haneda, Naoki Ohashi. Applied Physics Letters 104 [13] 132110. 2014.https://doi.org/10.1063/1.4870425 NIMS著者大澤 健男坂口 勲安達 裕大橋 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:22:36 +0900 更新時刻: 2026-09-29 06:59:31 +0900
