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Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics

K. Hasegawa, P. Ahmet, N. Okazaki, T. Hasegawa, K. Fujimoto, M. Watanabe, T. Chikyow, H. Koinuma.
Applied Surface Science 223 [1-3] 229-232. 2004.
https://doi.org/10.1016/s0169-4332(03)00903-6

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