Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy | SAMURAI, NIMS Researchers Directory Service

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Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy

Hirofumi Matsuhata, Naoyuki Sugiyama, Bin Chen, Tamotsu Yamashita, Tetsuo Hatakeyama, Takashi Sekiguchi.

Microscopy . 2016.

https://doi.org/10.1093/jmicro/dfw107

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-06-27 22:17:58 +0900Updated at: 2024-04-01 21:20:47 +0900

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