HOME > 論文 > 書誌詳細Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopyHirofumi Matsuhata, Naoyuki Sugiyama, Bin Chen, Tamotsu Yamashita, Tetsuo Hatakeyama, Takashi Sekiguchi. Microscopy . 2016.https://doi.org/10.1093/jmicro/dfw107 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-06-27 22:17:58 +0900更新時刻: 2024-04-01 21:20:47 +0900
