Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique
(プローブEBIC 法によるn-AlInAs/i-GaInAs電子チャネル構造の局所電気特性評価)

Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi.

Microscopy 63 [2] 161-166. 2014.

https://doi.org/10.1093/jmicro/dft050

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作成時刻: 2016-05-24 17:14:12 +0900更新時刻: 2024-04-02 04:56:58 +0900

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