Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
(Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications)

Joonho Bang, Satoru Matsuishi, Hideo Hosono.

Applied Physics Letters 110 [23] . 2017.

https://doi.org/10.1063/1.4985627

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松石聡

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-06-29 14:40:46 +0900 更新時刻: 2026-09-29 09:31:38 +0900

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