HOME > Article > DetailElectrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVDMariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, Tadashi Sakai, Masahiko Ogura, Hideyo Okushi, Satoshi Koizumi. Diamond and Related Materials 13 [1] 198-202. 2004.https://doi.org/10.1016/j.diamond.2003.10.036 NIMS author(s)KOIZUMI, SatoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 14:37:57 +0900Updated at: 2024-04-01 20:45:55 +0900