Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
(Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:33:51 +0900更新時刻: 2024-04-02 05:05:42 +0900