Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
(Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at :2016-05-24 17:33:51 +0900 Updated at :2020-11-16 22:42:55 +0900