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Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
(Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics)

Author(s)Min Sup Choi, Deshun Qu, Daeyeong Lee, Xiaochi Liu, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo.
Journal titleACS Nano 8 [9] 9332-9340
ISSN: 1936086X, 19360851
ESI category: MATERIALS SCIENCE
PublisherAmerican Chemical Society (ACS)
Year of publication2014
LanguageEnglish
DOIhttps://doi.org/10.1021/nn503284n
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