化合物半導体InPにYb添加で高い発光効率－ナノサイズ化で室温発光目指す
(High efficient luminescence in Yb doped InP-aiming at their luminescence at room temperature by reducing into nano-size)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 11:46:45 +0900 更新時刻: 2018-12-15 00:38:41 +0900