HOME > 論文 > 書誌詳細Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structuresK. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada. Journal of Applied Physics 101 [8] 084118. 2007.https://doi.org/10.1063/1.2721384 NIMS著者吉武 道子知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:25:42 +0900更新時刻: 2025-02-11 05:07:49 +0900