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Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada.
Journal of Applied Physics 101 [8] 084118. 2007.
https://doi.org/10.1063/1.2721384

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