グラフェン素子の作り方とゲート電界による伝導変調
(Fabrication of graphene device and gate-voltage characterization)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 16:07:47 +0900Updated at: 2018-12-14 22:05:17 +0900