Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold

H Amekura, K Narumi, A Chiba, Y Hirano, K Yamada, S Yamamoto, N Ishikawa, N Okubo, M Toulemonde, Y Saitoh.

Physica Scripta 98 [4] 045701. 2023.

https://doi.org/10.1088/1402-4896/acbbf5

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

AMEKURA, Hiroshi

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold

Created at: 2023-03-10 03:39:39 +0900Updated at: 2024-04-18 03:01:37 +0900

▲ Go to the top of this page