HOME > 論文 > 書誌詳細Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muonK. M. Kojima, M. Hiraishi, H. Okabe, A. Koda, R. Kadono, K. Ide, S. Matsuishi, H. Kumomi, T. Kamiya, H. Hosono. Applied Physics Letters 115 [12] 122104. 2019.https://doi.org/10.1063/1.5117771 NIMS著者松石 聡Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-06-29 14:40:07 +0900 更新時刻: 2026-10-30 09:35:26 +0900
