HOME > Article > DetailElectronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muonK. M. Kojima, M. Hiraishi, H. Okabe, A. Koda, R. Kadono, K. Ide, S. Matsuishi, H. Kumomi, T. Kamiya, H. Hosono. Applied Physics Letters 115 [12] 122104. 2019.https://doi.org/10.1063/1.5117771 NIMS author(s)MATSUISHI, SatoruFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-06-29 14:40:07 +0900 Updated at: 2026-09-29 09:31:31 +0900
