HOME > 論文 > 書誌詳細New Selective Molecular-beam Epitaxial Growth Method for Direct Formation of GaAs Quantum Dots.(GaAs量子井戸箱作製のための新しい選択的MBE成長法.)Nobuyuki Koguchi, ONISHI, Keiko, 高橋聰. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11 [3] 787. 1993.https://doi.org/10.1116/1.586789 NIMS著者大西 桂子Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 11:33:53 +0900更新時刻: 2024-04-01 20:53:21 +0900