Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy
(c面傾斜サファイア基板を用いたb-Ga2O3のHVPE成長)

Yuichi Oshima, Encarnaciόn G. Vίllora, Kiyoshi Shimamura.

Journal of Crystal Growth 410 53-58. 2015.

https://doi.org/10.1016/j.jcrysgro.2014.10.038

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MDRavailable Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

作成時刻: 2016-05-24 17:33:52 +0900 更新時刻: 2026-08-06 05:55:08 +0900

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