Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy
(c面傾斜サファイア基板を用いたb-Ga2O3のHVPE成長)
NIMS author(s)
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Created at: 2016-05-24 17:33:52 +0900 Updated at: 2026-10-08 05:57:27 +0900