Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

グループ別の業績一覧を追加しました (2026-07-27)

HOME > 論文 > 書誌詳細

Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor

Yasushi Ishiguro, Ryoma Hayakawa, Takeshi Yasuda, Toyohiro Chikyow, Yutaka Wakayama.

ACS Applied Materials & Interfaces 5 [19] 9726-9731. 2013.

https://doi.org/10.1021/am402833k

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:16:49 +0900 更新時刻: 2026-08-06 05:32:47 +0900

▲ページトップへ移動