Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor

Yasushi Ishiguro, Ryoma Hayakawa, Takeshi Yasuda, Toyohiro Chikyow, Yutaka Wakayama.

ACS Applied Materials & Interfaces 5 [19] 9726-9731. 2013.

https://doi.org/10.1021/am402833k

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作成時刻: 2016-05-24 17:16:49 +0900 更新時刻: 2026-10-08 05:34:17 +0900

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