HOME > 論文 > 書誌詳細The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source DopingYoshiaki Kikuchi, Thomas Chiarella, David De Roest, Karine Kenis, Patrick Ong, Naoto Horiguchi. IEEE Transactions on Electron Devices 64 [6] 2492-2497. 2017.https://doi.org/10.1109/ted.2017.2693211 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2026-09-01 18:18:42 +0900 更新時刻: 2026-10-03 07:10:07 +0900
