HOME > 論文 > 書誌詳細Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped EpitaxyYoshiaki Kikuchi, Yasushi Tateshita, Yuki Miyanami, Hitoshi Wakabayashi, Yukio Tagawa, Naoki Nagashima. Japanese Journal of Applied Physics 49 [7R] 071301. 2010.https://doi.org/10.1143/jjap.49.071301 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2026-09-01 18:18:52 +0900 更新時刻: 2026-11-04 07:11:47 +0900
