Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy

Yong-zhao Yao, Takashi Sekiguchi, Naoki Ohashi, Yutaka Adachi, Takeshi Ohgaki.

Applied Physics Letters 92 [21] 211910. 2008.

https://doi.org/10.1063/1.2937833

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作成時刻: 2016-05-24 15:33:02 +0900更新時刻: 2024-04-01 18:56:16 +0900

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