HOME > Article > DetailIon-induced frequency shift of 1100 cm-1 IR vibration in implanted SiO2: compaction vs. bond-breaking(厚いSiO2上の薄い注入層のイオン誘起密度化:1050 cm-1反射帯の新解釈)H. Amekura, N. Umeda, N. Okubo, N. Kishimoto. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 1101-1105. 2003.https://doi.org/10.1016/s0168-583x(03)00919-4 NIMS author(s)AMEKURA, HiroshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 11:49:16 +0900 Updated at: 2026-11-02 06:02:43 +0900